Description Nano-Master Main Equipment: Thin Film | Etch | Cleaning | Space Simulation | Hybrid NIE-4000 Ion Beam Milling and Etching systems (Download Brochure) NANO-MASTER’s Ion Beam Milling and Etching systems are field proven, fully automated systems that provide ease of use, high reproducibility, and reliable performance with extremely good uniformity. Dual Chamber Ion Beam Milling/Etching and Sputter Coating in Vacuum Sample Transfer Quartz Grating Etched by Ion Beam (pitch 323nm) Uniformity Data on 4” Wafer with 7.5cm DC Ion Source A variety of sample holders and Ion Source configurations allow for a diverse range of applications to be carried out. Sample holders used in NANO-MASTER Ion Beam Milling systems have ±90° tilt, rotation, water or LN cooling, and helium backside cooling capabilities. For temperature sensitive applications, NANO-MASTER technology has demonstrated capability of keeping substrate temperatures below 70°C. Heating is also possible via a heating element embedded within the platen assembly. In certain other applications, heating samples above 150°C is desired for increased volatility of materials etched and thus increasing the etch rate. By tilting the sample, the sidewall profile can be controlled and radial uniformity can be optimized. Rotation in conjunction with offset of axis of rotation from ion beam axis provides broader radial thus more uniform etch profile. Uniformity Data on 6” Wafer with 20cm RF Ion Source Various options are available for different grid configurations and neutralizers. Sources such as RF ICP, compatible with reactive gases, provide etch selectivity and etch rate improvement. A sputtering option can be provided for coating freshly etched metal surfaces to protect from oxidation. A load lock chamber with or without turbomolecular pump and automatic load and unload capability is also available. NANO-MASTER can provide dual chamber systems with RIE and Ion Beam Milling as a platform capable of etching almost all materials or Sputtering and Ion Beam Etching System for etching gratings and coating them on a single footprint. Furthermore, two chambers can be connected with auto wafer load and transfer load lock between chambers if two processes need to be carried out without breaking vacuum. Such a dual system reduces the cost and foot print compared to two separate systems by using a common pumping system, power supplies, and control electronics. Features: Electropolished 14″ SS cubical chamber Tiltable, Rotating and Water Cooled Platen Up to 8″ wafer or substrate holder ±90° automatically tiltable and rotating Water or LN cooled, optional He backside cooling Sample temperature <70<C Ion source Gridded KDC Kaufman source (1cm-16cm beam sizes available) DC for Ion Milling RF ICP for Reactive Ion Beam Etching Pneumatic shutters Ion beam neutralization Shutter ±2% etch uniformity across 6″ substrate Turbomolecular pump backed up with dry backing pump 5×10-7 torr base pressure Ar mass flow controller PC controlled with LabVIEW software Recipe driven, three levels of password protected access EMO protection and safety interlocks 26″ x 44″ footprint with enclosed panels Compatible for Class 100 clean rooms Options Spectroscopic end point detection Helium backside cooling Electro-polished 20″ SS cubical chamber Load lock Auto load/unload with substrate carrier 1200 l/s turbo molecular pump for 10-8 Torr range base pressure Cryogenic pumping package Automatic Load/Unload Chamber Additional MFCs for reactive gases Gridless End-Hall eH sources for high current low energy beam surface cleaning Gridded RF ICP sources Hollow cathode beam neutralizer Sputtering source for passivation layer deposition to protect freshly etched surface from oxidation Applications: Argon Milling for Planarization III-V Photonics Components Laser Gratings Ion Beam Cleaning Chamber with Tilted Platen High Aspect Ratio Etching of Photonics Crystals Deep Trenches on SiO2, Si and Metals GENERAL SPECIFICATIONS Chamber: 14” or 20” SS cube chamber Maximum Substrate Size: Up to 6” with DC and up to 8” with RF ion sources DC Ion Source Beam Diameter: Maximum 16cm DC Ion Beam Current: >650mA RF Ion Source: Maximum 20cm RF Ion Beam Current: >800mA Shutter: Pneumatic Sputtering Chamber with Rotating, Heated and Biasable Platen Platen: Water or LN cooled, rotating up to 20 RPM, tiltable /-90° Base Pressure: 5×10-7 torr with 260 l/sec turbo, 3×10-7 Torr with 680 l/sec turbo, 8×10-8 torr with 1240 l/sec turbo on a 14” chamber MFCs: Reactive and non-reactive gases (Ar, O2, CF4) System Control: PC controlled with LabVIEW, recipe driven Loading and Unloading: Manual or automatic wafer load and unload through load lock Wall Mount: Available Class: 100 Footprint: 26”x44” FACILITY REQUIREMENTS Power Input: 208VAC/380VAC/415VAC, 20A/Phase, 50/60Hz View of Ion Beam Chilled Water: 2gpm @ 50psi, 18°C Compressed Air: 1/4” Swagelok, 80-90 PSI Processed Gas: 1/4” Swagelok, 20 PSIG Nitrogen: 1/4“ Swagelok, 20 PSIG Exhaust (System): NW25 The trademarks of the equipment and parts contained on this page belong to the Original Equipment Manufacturers. Please contact us for more information on the product: Your Name*: Your Email: Your Message: Captchac Code Submit: [dynamichidden dynamichidden-813 "CF7_URL"] Δ Nano-Master Main Equipment: Thin Film | Etch | Cleaning | Space Simulation | Hybrid SS10840 Share the post "NIE-4000 Ion Beam Milling" FacebookXShare…
