Description Application Tray for LED, PSS etching process, RTP Material Characteristics High thermal conductivity, plasma resistant, long life SiC refers to silicon carbide. Silicon carbide (SiC) is made of quartz sand, coke and other raw materials through the high temperature furnace melting. The current industrial production of silicon carbide has two kinds, black silicon carbide and green silicon carbide. Both are hexagonal crystal, the specific gravity of 3.21g / cm3, micro hardness of 2840 ~ 3320kg / mm2. At least 70 kinds of crystalline silicon carbide, due to its low gravity 3.21g/cm3 and high temperature strength, it is suitable for bearings or high temperature furnace raw materials. at any pressure can not be reached, and have a considerable low chemical activity. At the same time, many people have tried to replace silicon with silicon carbide due to their high thermal conductivity, high crush electric field strength and high maximum current density. Recently, in the application of semiconductor high power components. In fact, the silicon carbide substrate in thermal conductivity, more than 10 times higher than the sapphire substrate, so the use of silicon carbide substrate LED components, with good conductivity and thermal conductivity, relatively conducive to the production of high-power LED Material Comparison Chart: Nature density(g/㎝3 ) density(g/㎝3 ) (10-6 / ℃) (Kgf/㎜2 ) (J/㎏*°K) (GPa) (MPa) (MPa) (MPa) (MPa*m0.5 ) (Poisson’s ratio) (℃) Al2-O3 3.9 3.9 8 1600 880 370 262 2600 380 3.6 0.26 2053 ZrO2 6 6 10.1 1400 400 200 700 1850 690 9.5 0.23 2700 SiC 3.2 3.2 4 2300 700 410 400 3900 550 4.6 0.19 2700 Si3 N4 3.3 3.3 2.3 1500 700 310 524 2500 780 7.7 0.24 1900 Cellon Sialon 3.2 3.2 3 1600 620 300 450 3500 600 6.5 0.23 1900 WC 15 15 6 1600 390 700 896 6100 550 25 0.18 2870 Glass 2.5 2.5 0.5 1000 740 70 – 1100 69 1 0.2 2200 BN 2 2 2 220 1850 62 41 143 73 – 0.13 2600 AlN 3.2 3.2 4.4 1200 730 340 400 2070 350 2.6 0.25 2400 B4 C 2.5 2.5 5.6 3200 930 450 350 2800 400 3 0.15 2450 Steel 7.8 7.8 13.6 126 448 200 520 – – 14 0.3 1450 Relatively high thermal conductivity of the substrate table: Substrate material FR4 MCPCB LTCC Al2-O3 SiC AlN (W/m*°K) 0.7~1.2 2~6 8~15 20~28 120~140 140~180 Insulativity(Ω×㎝) 1014 108 1013 1015 108 1011 (0.25cm2 ) (W) <0.2 0.5~1 1~1.5 2~3 3~15 15~20 Board size To large-scale To large-scale No more 6″×6″ No more 6″×6″ No more 6″×6″ No more 6″×6 The items are subject to prior sale without notice. These items are only for end users. Please contact us for more information on the product: Your Name*: Your Email: Your Message: Captchac Code Submit: [dynamichidden dynamichidden-813 "CF7_URL"] Δ SiC Wafer Boats Manufactures: Kallex; 3X Ceramic Parts;CoorsTek;Ferrotec Taiwan Co;FCT(Tangshan);Xi’an Zhongwei New Materials; Zhejiang Dongxin New Material;Shandong Huamei New Material . Technology Adoption: Semiconductor; LED; PV. Segment type: Horizontal; Vertical. SS5624 Share the post "Sintered SiC (SSiC) Susceptor" FacebookXShare…
