~8″ New Sputter

Description New Sputtering Deposition Equipment Made in CA,USA. Wafer Size: Small~8 inch Wafer loading: Manual, with Load Lock Cathodes: 1~3 x Delta Shape OR 1~4 x 8″ Circle Shape Sputter Methods: DC Magnetron Gas Lines: 1~3 MFCs Table Rotate/Lift Subsystem: Feed-thru assembly (Option) Plasma Clean Etch: RF, 13.56MHz (Option) More info on the new sputtering deposition equipment for your reference. Process proven for III-V, the new sputtering deposition equipment is manufactured in the configuration of a manually-loaded system capable of fully automatic (non-PLC) operation. Its sputtering head is equipped with three Delta cathode or up to four round 8-inch positions. The new sputtering deposition equipment deposits a wide variety of materials onto substrates such as ceramic, metal, plastics, glass and semiconductors. The system can also be used for RF sputter-etching, a process in which material is removed from, rather than being deposited on, the substrates prior to sputter deposition. These sputtering systems sequentially deposit thin films of up to three or four different materials onto a single substrate, thus attaining sandwich-structured films such as multi-layer optical interference filters or semiconductor devices. Resulting thin films range in thickness from a few Angstroms up to several microns. Key Features Process Proven for III-V substrates Non-PLC (Smaller footprint / easy maintenance) 40 years proven sputter technology New optimum PC System Control Table Rotate/Lift Subsystem: Feed-thru assembly DC 24V for Motors,Actuator,Relay,Solenoid Efficient 8″ ,Delta cathodes, 2 to 6″ option High throughput operation High Uniformity and Yield DC magnetron Sputter, RF, Pulse DC option Magnetron and Diode Sputter option RF Etch and Bias are optional Ultra Clean vacuum system Load lock operation UHV design Flexible for development or production use Full range of substrate sizes and shapes Various pumping and power options Co-sputtering option Reactive Sputtering option PC System Controller Maintenance, Manual, Semi Automatic and Full Automatic operation modes Automated calibration of all sub-systems Troubleshoot to sub-assembly levels Programmed comprehensive calibration and diagnostic functions Recipe creation for full automatic wafer processing Automatic decline of improper recipes and process data Multi-level password protection Storage of multiple recipes and system functions Real-Time process data acquisition,display ,analysis Real-Time graphics use display Process Data and Recipe storage on a hard drive Easy TC vacuum gauge calibration Positioning Deposition(optional) GEM/SEC II functions (optional) Process Chamber  28″ diameter X 12″ high stainless steel cylinder with 6″ CF flange viewport and load lock port 28″ diameter stainless steel top plate. 28″ diameter stainless steel base plate 11/2” air-operated roughing isolation valve Air-operated gas inlet valve Air-operated vent valve 11/2“blanked-off leak check port Removable deposition shields 23″ diameter, 3-position water-cooled annular substrate table with Feed-thru assembly Table Rotate/Lift Subsystem. Full circle shutter with vane shutter Chain drive pallet carrier transport Heavy duty electric hoist Loadlock  30″ x 28″ x 8″ stainless steel load lock chamber with aluminum cover 2″ air-operated roughing isolation valve Air-operated vent valve 23″ diameter molybdenum annular substrate pallet Pallet carrier and chain drive transport Vacuum Systems for the process chamber and loadlock 2 stage Cryopump with 1000 l/s pumping speed for air, including chevron, water-cooled compressor and lines, automatic regeneration controller and plumbing kit. 71/2″ O.D. (6″ ASA) aluminum air-operated gate valve, Air-operated venetian blind throttling valve. 36.7 cfm mechanical pump for process chamber and load lock roughing Chamber base pressure: 5X10-7 Torr. Utilities and Dimension Rear-mounted electrical, water, gas and LN2 inlet panel Power distribution box Water flow switch panel and manifold DC or RF power supply: 208VAC, 60Hz, 3phases, 60A, 4 wires Vacuum system: 208VAC, 60Hz, 3phases, 60A, 5 wires Cooling Water: 1.8gpm3 Process N2: 60-70 psi Process Argon: 5-10 psi CDA: 40-60 psi Dimension: 65″W x 46″D x 68″H Weight: 2,288 lbs The trademarks of the equipment and parts contained in this page belonged to the Original Equipment Manufacturers. The info on the sputtering deposition equipment is subject to change without notice. This is not purchase specifications. Please contact us for more information on the product: Your Name*: Your Email: Your Message: Captchac Code Submit: [dynamichidden dynamichidden-813 "CF7_URL"] Δ Share the post "~8″ New Sputter" FacebookXShare…