Description 300mm Aluminum Wafer 12 inch Aluminum Wafer Maker: USIC MOQ: 1 package with 25pcs. EXWORKS (Taoyuan,Taiwan). HTS code 381800. Diameter (mm) : 300 Thickness (μm) : 775±25 Growth Method : MCZ/CZ Type : P/N Dopant : B, Ph, As, Sb Crystal Orientation : <100> Resistivity (Ohm-cm) : 0.1-100 TTV (μm) : ≤25 Bow/Warp (μm) : ≤50 Aluminum Layer Thickness (Å) : 1,000-50,000 Aluminum Layer Thickness Tolerance (%) : ±10 Adhesion Test Classification : 5B Buyers accept the following terms if shopping. Must follow USA DOC import and export regulations. These wafer are subject to prior sale. Buyers accept backorder with a lead time (TBD). The photo here is only for your reference. It was not from the real wafers. Wire bonding is one of the traditional techniques for interconnects in electronic devices and is widely used for semiconductor OSAT (Outsourced Semiconductor Assembly and Test) field. An aluminum wafer is normally applied to wire bonding test for replacing high-cost process wafer. Au/Cu is ball bonded to Al pad which forms an IMC (Intermetallic compound) layer and provides adhesion between wires and pad. “IMSi Aluminum Wafer” uses sputter deposited aluminum layer. Compared with evaporation technique, sputtering has more advantages on step coverage, adhesion and so on. Adhesion is an important characteristic of wire bonding process. USIC “IMSi Aluminum Wafer” uses adhesion testing performed according to ASTM D3359 and achieves classification 5B which is the best result of the test. Please contact us if you are also interested in the the following 200mm 300mm wafers/silicon ingot. 200mm Si Test Wafer 300mm Si Test Wafer 200mm Al Wafer 300mm Al Wafer 200mm Si Oxide Wafer 300mm Si Oxide Wafer 300mm Silicon Ingot 350mm Silicon Ingot Please contact us for more information on the product: Your Name*: Your Email: Your Message: Captchac Code Submit: [dynamichidden dynamichidden-813 "CF7_URL"] Δ Share the post "300mm Aluminum Wafer" FacebookXShare…
