Description Nano-Master Main Equipment: Thin Film | Etch | Cleaning | Space Simulation | Hybrid Dual Chamber Systems ALD, Sputtering, Evaporation, Ion Beam Milling or Etching, RIE, PECVD Any combination of two systems; ALD, Sputtering, Evaporation, Ion Beam Milling or Etching, RIE, PECVD found in the NM catalog can be configurated as dual system. Cost is cut by sharing pumping systems and power supplies when applicable. The chambers are isolated from each other via gate valves and can be pumped and vented individually. Load lock or in vacuum chamber-to-chamber transfer is available. Features: 26″x44″ footprint with enclosed panels ideal for clean rooms Fully automatic PC based, recipe driven LabVIEW user interface EMO protection and safety interlocks Ion Beam and PVD NRP-4000 PECVD and RIE/ ICP/DRIE PECVD and Sputtering RIE/ICP/DRIE and Sputtering NLP-4000 PECVD PEALD NLE-4000 PAALE PEALD NANO-MASTER’S NLP-4000 HYBRID PEALD/PECVD SYSTEM Due to the chamber design and planar ICP source, both ALD and PECVD processes can be ran within the same NLP-4000 system without the need of mechanical reconfiguration. The hybrid system al-lows for deposition of both thin ALD films and thick PECVD films within the same chamber and process (“recipe”). HYBRID SYSTEM: The Nano-Master NLE-4000 series of hybrid system provides both Plasma-Enhanced Atomic Layer Etch-ing (PEALD) and Plasma-Assisted Atomic Layer Etching (PAALE) capability in the same process chamber making it a state-of-the-art ALE tool for Research and Development. Widely used in na-noscale fabrication, MEMS, quantum devices, and advanced semiconductor technologies, our hy-brid PAALE/PEALD system is able to provide damage-free Plasma Assisted Atomic Layer Etching. Nano-Master ALE systems provide soft Atomic Layer Etching using our unique Planar Inductive Coupling Plasma (ICP) source. NANO-MASTER’S HYBRID PEALD/PAALE SYSTEM ATOMIC LAYER ETCHING: Atomic Layer Etching (ALE) is a precise material removal technique used in semiconductor manu-facturing that operates at the atomic level. This method ensures ultra-thin layer removal with high fidelity, allowing for selective etching of specific materials while minimizing damage to adja-cent areas. ALE enables precise control over surface morphology, making it essential for advanced device architectures. Characterized by low etch rates, it is ideal for applications requiring meticu-lous layer management typically in the order of monolayers. The process involves alternating cy-cles of surface modification and etching, which enhance uniformity and reproducibility. Addition-ally, ALE is compatible with a variety of materials, including silicon, metals, and dielectrics, and it reduces substrate damage, preserving electrical properties. The trademarks of the equipment and parts contained on this page belong to the Original Equipment Manufacturers. Please contact us for more information on the product: Your Name*: Your Email: Your Message: Captchac Code Submit: [dynamichidden dynamichidden-813 "CF7_URL"] Δ Nano-Master Main Equipment: Thin Film | Etch | Cleaning | Space Simulation | Hybrid SS10840 Share the post "Hybrid/Dual Chamber Systems" FacebookXShare…
