Description Nano-Master Main Equipment: Thin Film | Etch | Cleaning | Space Simulation | Hybrid NPE-4000 PECVD Systems (Download Brochure) NANO-MASTER’s PECVD systems are capable of depositing high quality SiO2, Si3N4, CNT, DLC or SiC films. Depending on application, RF showerhead, Hollow Cathode, ICP or Microwave plasma sources can be used. The platen can accomodate up to 8″ wafers and can be biased with RF, Pulsed DC or DC while being heated up to 800°C resistively or with IR lamps. The chamber is evacuated to 5×10-7 Torr pressure range using 250 l/sec turbo molecular pump backed with 5 cfm mechanical pump. The system utilizes LabVIEW PC control for full automation. NPE-4000 for Si3N4 and SiO2 Deposition NPE-4000 for CNT NPE-4000 for DLC Features: 13″ Al chamber or 14″ SS cube chamber 5×10-7 Torr base pressure attained with turbo pumping package Plasma sources: RF showerhead, ICP, hollow cathode and microwave Gas ring for precursors and gases Platen: 200°C to 800°C, rotating, biasable with RF, low frequency RF, DC, and pulsed DC MFC’s with electropolished gas lines and pneumatic shut-off valves Fully automated PC based, recipe driven LabVIEW user interface EMO protection and safety interlocks Options -500 V Bias, 700 °C, ICP Off 300 W RF Bias -1000 V DC Bias, 500 °C, ICP On 700 °C, ICP On Heated Plate with RF Bias Hollow Cathode Plasma Source NM-ICP downstream high density plasma source Hollow cathode plasma source Microwave plasma source Substrate Pulsed DC bias Substrate LF bias for film stress control Rotating platen for coating 3D parts Auto Load/Unload Dry Pump Bubblers for Organo-metallics with heated gas lines Gas box for toxics gases with toxic gas monitors End point detection Various dopants (PH3, B2H6) Dural chamber systems-NRP-4000 PECVD and RIE: Applications: Encapsulation, isolation Photonic structures DLC’s coating CNT’s – Memory devices Surface passivation layer – Solar cells Graphene – Nano scale electronics GENERAL SPECIFICATIONS Platen Size: Up to 8” Plasma Source Diameter: 8” RF plate with shower head gas distribution Number of MFC’s: 5 or up to 10 (with separate gas box) Source to Platen Distance: 2” to 4” Vacuum: 5 10-7 Torr range with 260 l/sec corrosive turbo pump with 9cfm mech. Maximum Platen Temperature: 400°C for 8” platen, 700°C for 6” platen, 800°C for 4” platen, RF power Supply: 13.56MHz, 600W RF for plasma source or 1KW RF supply for ICP source LF Power for biasing the platen: 300W, 350-450KHz FACILITY REQUIREMENTS Power Input: 208V/380V/415V, 20A/Phase, 50/60Hz Chilled Water: 2gpm @ 50 psi, 18°C Compressed Air: 1/4” Swagelok, 80-90 PSI Processed Gas: 1/4” Swagelok, 20 PSIG Nitrogen: 1/4“ Swagelok, 10 PSIG Exhaust (System): NW25 DIMENSIONS Width Depth Height NPE-3500 22” 26” 60” NPE-4000 43” 26” 60” The trademarks of the equipment and parts contained on this page belong to the Original Equipment Manufacturers. Please contact us for more information on the product: Your Name*: Your Email: Your Message: Captchac Code Submit: [dynamichidden dynamichidden-813 "CF7_URL"] Δ Nano-Master Main Equipment: Thin Film | Etch | Cleaning | Space Simulation | Hybrid SS10840 Share the post "NPE-4000 PECVD Systems" FacebookXShare…
