Description Nano-Master Main Equipment: Thin Film | Etch | Cleaning | Space Simulation | Hybrid NLD-4000 Atomic Layer Deposition Systems (Brochure Download) Without Loadlock Atomic Layer Deposition is an important technique for depositing thin films for a variety of applications. ALD is able to meet the needs for precise thickness control and conformal deposition in high aspect ratio structures to a level that far exceeds other deposition techniques. The nature of the sequential, self-limiting surface reactions in ALD produces a non statistical deposition because the randomness of the precursor flux is not a factor. As a result, ALD films remain extremely smooth, continuous, and pin-hole free allowing for excellent film properties. ALD processing can also be scaled to very large substrates. With Loadlock The NLD-4000 is a stand alone PC controlled ALD system which is fully automated and safety-interlocked having capabilities to deposit oxides and nitrides (e.g. AlN, GaN, TaN, TiN, Al2O3, ZrO2, LaO2, HfO2) for Semiconductor, Photovoltaic and MEMS applications. It has a 13″ aluminum reaction chamber with heated walls and a pneumatically lifted top for easy chamber access. The system features an onboard glovebox which can accomodate an array of up to seven heated or cooled 50cc cylinders for precursors and reactants incorporating fast-pulse delivery valves for pulsed gas input. Unreacted precursors can be captured with a heated filter on the chamber exhaust port. Recipes, temperature setpoints, gas flows, pump-down and vent cycles, and the flushing of delivery lines are all controlled automatically via LabVIEW software. Options include automatic load/unload (without changing system footprint), Planar ICP source with remote plasma for Plasma Enhanced ALD (Planar ICP geometry maintains a small reaction chamber volume for faster cycle times), and turbo-molecular pump for lower base pressures. Features: Less than 1Å uniformity Precursor Glove Box 13″ anodized Al chamber Minimal volume for fast cycle time and throughput Up to 8″ substrate Heated chamber walls 400°C substrate heater Onboard precursor glovebox Up to seven 50cc precursor cylinders 300 l/sec maglev turbomolecular pumping package 5×10-7 torr base pressure Fast pulse gas delivery valves Large area filter to capture unreacted precursors Large area filter to capture unreacted precursors High aspect ratio structure coating Fully automated PC based, recipe driven External Gas Pod LabVIEW user interface Computer controlled safety interlocks 26″x44″ footprint with enclosed panels ideal for clean rooms Options Downstream planar inductively coupled remote plasma source for PE-ALD process Auto load/unload Additional precursors PEALD and PECVD PEALD and PALAE Applications: High-k dielectrics Hydrophobic coating Passivation layer High aspect ratio diffusion barriers for Cu interconnects Conformal coatings for micro fluidics applications Fuel cells, e.g. single metal coating for catalyst layers SYSTEM INFORMATION GENERAL FEATURES SUMMARY Maximum Substrate Size : 8” Substrate Temperature Range: Up to 400°C Gas Lines: Heated and electropolished Precursors : Up to 7 precursor/reactant cylinders MFC’s : 2 standard, extras optional Plasma Enhanced ALD: Downstream ICP (Optional) System Control: PC controlled with LabVIEW and user interface Loading and Unloading Manual or Automatic FACILITY REQUIREMENTS Power Input : 110V/208V/380V/415V, 20A/Phase, 50/60 Hz Chilled Water : 2GPM @ 50 PSI, 18°C Compressed Air: 1/4″ Swagelok, 80-90 PSI Process Gases: 1/4” Swagelok, 20 PSIG Nitrogen: 1/4” Swagelok, 10 PSIG Exhaust (System): NW25 DIMENSIONS System Type : Width Depth Height NLD-4000 : 26” 44” 44” NLD-3500 : 26” 24” 44” NLD-3000 : 26” 26” 32” ALD SAMPLE DATA: Deposition of Al2O3 Deposition of GaN Deposition of AlN Deposition of SiO2 Deposition of Si3N4 NLD-3000 and NLD-3500 are available. Please contact us for more information. NLD-3500 ALD NLD-3000 ALD The trademarks of the equipment and parts contained on this page belong to the Original Equipment Manufacturers. Please contact us for more information on the product: Your Name*: Your Email: Your Message: Captchac Code Submit: [dynamichidden dynamichidden-813 "CF7_URL"] Δ Nano-Master Main Equipment: Thin Film | Etch | Cleaning | Space Simulation | Hybrid SS10840 Conformal film deposition is a technique that creates thin films that adhere to the shape of a substrate. It’s used in the semiconductor and hard coating industries. How it works The substrate is placed in a vacuum chamber Gaseous precursors and reactants are alternately pulsed into the chamber The precursors and reactants react with the substrate’s surface The process repeats, building up a film of precise thickness Benefits of conformal film deposition The films are uniform and conformal, even in 3D structures The surface properties can be optimized independently of the substrate’s shape Applications Microelectronics: Used to fill metallic films into complex 3D structures Optical coatings: Used to coat windows, lenses, mirrors, and sensors Biomedical applications: Used to apply protective coatings, modify surfaces, and coat pharmaceuticals Related techniques Atomic layer deposition (ALD), Atomic layer etching (ALE), and Molecular layer deposition (MLD). Share the post "NLD-4000 ALD System" FacebookXShare…
